Mechanical behavior of 30–50 nm thick aluminum films under uniaxial tension

We present uniaxial tensile test results for 30–50 nm thick freestanding aluminum films. Young’s modulus and ductility were found to decrease monotonically with grain size. Reverse Hall–Petch behavior was observed with no appreciable room temperature creep. Non-linear elasticity with small irreversible deformation was observed for 50 nm thick specimens.     

The microstructure of Cu films deposited by the self-ion assisted technique

The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100) fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution. The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that all factors necessary for abnormal (100) growth are present in the films.     

The corrosion behavior of sputter-deposited aluminum-tungsten alloys

Thin films on aluminum-tungsten alloys were prepared by co-deposition of pure aluminum and pure tungsten, each sputtered by an independently controlled magnetron source, on glass and sapphire substrates. Completely amorphous films were obtained in the Al₈₀W₂₀-Al₆₇W₃₃ composition range. Passivity and corrosion behavior of amorphous Al-W alloys were investigated in 1 M deaerated hydrochloric acid solution using polarization and impedance spectroscopy measurements and have been correlated with the properties of pure alloy components. Tungsten and sputter-deposited Al-W thin films are inherently passive materials while aluminum undergoes pitting corrosion in hydrochloric acid solution. The passive film formed at the OCP on each alloy possesses excellent electric and dielectric properties comparable to those of the isolating film on tungsten. The absolute impedance increases with increasing tungsten content in the alloy. According to electrochemical polarization measurements, alloying Al with W in solid solution significantly enhances the material's resistance to pitting corrosion by shifting the breakdown potential above 2000 mV (Al₆₇W₃₃) and lowering the corrosion rate at the OCP by more than two orders of magnitude. The most likely mechanism explaining the passivity of amorphous Al-W alloys, the Solute Vacancy Interaction Model (SVIM), involves the formation of complexes between highly oxidized solute atoms (W⁺⁶) and mobile cation vacancies, which restrict the transport of Cl⁻ through the oxide film and inhibit its breakdown in hydrochloric acid solution. The role that film stress relaxation effects and microscopic defects in amorphous Al-W films, of the some composition, and deposited on various substrates play in their corrosion resistance is discussed.     

金刚石膜的计算机虚拟制备技术中的分子动力学模拟

综述了近年来金刚石薄膜形成过程的分子动力学（Molecular Dynamics，简称MD）模拟研究，详细地阐述了原子间相互作用势的选取，总结了不同沉积条件下MD的计算模型和几种典型情况下的模拟结果。研究表明：在原子尺度上，MD方法能较全面地提供有关膜生长的信息，对进一步了解金刚石膜形成的微观机制以及为细观层次仿真提供基本信息均具有重要意义。     

光漂白法制备有机聚合物非线性定向耦合器

研究了用光漂白的方法制备PMMA/DR1聚合物非线性定向耦合器,提出了一种容易的制备方法来得到要求的耦合长度.测量了材料的光学非线性对定向耦合器两臂透过率的影响.实验结果表明由于光学非线性,耦合器的耦合长度随着入射光强度的改变而发生变化.     

Effects of compressive and tensile stress on the growth mode of epitaxial oxide films

Oxide films were deposited on different substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction was performed to in situ investigate the change of growth mode and the lattice relaxation during the growth. An asymmetrical phenomenon was found in the two kinds of strain states, compressive stress and tensile stress of heterostructures with different lattice mismatch. In the case of BaTiO₃/SrTiO₃ (2.2%), 2D layer-by-layer growth mode without lattice relaxation can be maintained for a longer period for BTO films on STO with compressive stress, comparing to STO films on BTO with tensile stress. When MgO films were deposited on SrTiO₃ with a large mismatch of 7.8%, compressive stress leads to rapid lattice relaxation with a very thin wet layer, and 3D strained island were observed. As a comparison, SrTiO₃ films on MgO with tensile stress were configured. No RHEED patterns can be observed duo to a large tensile stress.     

基体温度对磁控溅射沉积ZAO薄膜性能的影响

利用中频交流磁控溅射方法 ,采用氧化锌铝陶瓷靶材 [w(ZnO) =98%、w(Al2 O3 ) =2 % ]制备了ZAO(ZnO∶Al)薄膜 ,观察了基体温度对ZAO薄膜的晶体结构、电学和光学性能的影响 ,采用X射线衍射仪对薄膜的结构进行了分析 ,采用光学分度计和电阻测试仪测量了薄膜的光学、电学特性 ,采用霍尔测试仪测量了薄膜的载流子浓度和霍尔迁移率。结果表明 :沉积薄膜时的基体温度对薄膜的结构、结晶状况、可见光透射率以及导电性有较大的影响。当基体温度为 2 5 0℃ ,Ar分压为 0 8Pa时 ,薄膜的最低电阻率为 4 6× 10 -4Ω·cm ,方块电阻为 35Ω时 ,可见光 (λ =5 5 0nm)透射率高达 92 0 %。     

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展.指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等.并指出了该研究领域的研究方向.     

p-Si薄膜生长的ECR-CVD等离子体系统的结构设计

提出了一种生长p-Si薄膜的ECR-PECVD等离子体系统。系统采用永磁铁和线圈相结合，改善反应室磁场的均匀性；微波窗口设计成多层结构．避免窗口污染；衬底托架移动和旋转利于改善生长膜的均匀性。